solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number / ordering information 1 / sdr4 __ __ __ l screening 2/ = none tx = tx level txv = txv level s = s level ? ? ? ? l package ___ = axial sms = surface mount square tab ? ? ? ? ? ? ? l voltage g = 400 v j = 600 v k = 800 v m = 1000 v n = 1200 v sdr4g - sdr4n and sdr4gsms ? sdr4nsms 3 amp 400 ? 1200 volts 50-80 nsec ultra fast rectifier features: ? ultra fast recovery: 50-80 nsec max. @ 25c 85-125 nsec max. @ 100c ? single chip construction ? piv to 1200 volts ? low reverse leakage current ? hermetically sealed ? for high efficiency applications ? available in axial leaded & surface mount versions ? metallurgically bonded ? tx, txv, and s-level screening available 2/ maximum ratings symbol value units peak repetitive reverse and dc blocking voltage sdr4g sdr4j sdr4k sdr4m sdr4n v rrm v rwm v r 400 600 800 1000 1200 volts average rectified forward current (resistive load, 60 hz sine wave, t a = 25oc) io 3 amps peak surge current (8.3 ms pulse, half sine wave superimposed on io, allow junction to reach equilibrium between pulses, t a = 25oc) i fsm 75 amps operating & storage temperature top & tstg -65 to +175 oc maximum thermal resistance junction to lead, l = 3/8 " junction to end tab r jl r je 20 14 oc/w notes: 1 / for ordering information, price, operating curves, and availability ? contact factory. 2 / screening based on mil-prf-19500. screening flows available on request. axial leaded sms (square) note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: RU0015B doc
solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com sdr4g - sdr4n and sdr4gsms ? sdr4nsms electrical characteristics part type symbol max units instantaneous forward voltage drop (i f = 3 adc, t a = 25oc, 300 s pulse) sdr2g ? j sdr2k ? n v f 1.9 2.1 vdc instantaneous forward voltage drop (i f = 3 adc, t a = -55oc, 300 s pulse) sdr2g ? j sdr2k ? n v f 2.1 2.3 vdc reverse leakage current (rated v r , t a = 25oc, 300 s pulse minimum) i r 5 a reverse leakage current (rated v r , t a = 100oc, 300 s pulse minimum) i r 0.5 a junction capacitance (v r = 10 vdc, t a = 25oc, f = 1mhz) c j 40 pf reverse recovery time ( i f = 500 ma, i r = 1a, i rr = 0.25a, t a = 25oc) sdr2g ? j srs1k srs1m srs1n t rr 50 60 70 80 nsec case outline: (axial) b ?c ?a d d dimensions dim min max a .120? .180? b .130? .230? c .047? .053? d 1.00? --- case outline: surface mount (sms) c b a a d dimensions prior to solder dipping dimensions dim min max a 0.172? 0.180? b 0.180? 0.280? c 0.022? 0.028? d 0.002? ?? note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: RU0015B doc
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